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Electron microscopy of ultra-thin buried layers in InP and InGaAs

TitleElectron microscopy of ultra-thin buried layers in InP and InGaAs
Publication TypeJournal Article
Year of Publication1993
AuthorsGrigorieff, N, Cherns D, Yates MJ, Hockly M, Perrin SD, Aylett MR
Refereed DesignationRefereed
JournalPhilosophical Magazine a-Physics of Condensed Matter Structure Defects and Mechanical Properties
Volume68
Pagination121-136
Date PublishedJul
ISBN Number0141-8610
Accession NumberISI:A1993LM12000009
KeywordsDIFFRACTION
Abstract

The large-angle convergent-beam electron diffraction (LACBED) technique has been used to measure layer thicknesses and strain of ultra-thin arsenic and phosphorus-rich layers produced by temporary arsine and phosphine purges in the metal-organic vapour phase epitaxy growth of InP and InGaAs. The paper describes how the technique, previously used to investigate single quantum wells of thickness between 8 and 30 angstrom, has been extended to layers of thicknesses of one to two monolayers. It is shown that LACBED patterns can be recorded under conditions in which only a small constant inelastic background and elastic scattering need be considered and can be analysed in detail using a kinematical approach. By combining LACBED results with dark-field images showing the presence of interfacial steps and high-resolution images from cross-sectional samples, a more detailed understanding of the growth interrupt layers is derived.

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