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Profiling of Ge(X)Si(1-X)/Si strained-layer superlattices by large-angle convergent-beam electron diffraction and electron holography

TitleProfiling of Ge(X)Si(1-X)/Si strained-layer superlattices by large-angle convergent-beam electron diffraction and electron holography
Publication TypeBook Chapter
Year of Publication1993
AuthorsDuan, XF, Grigorieff N, Cherns D, Steeds JW, Sheng C
Refereed DesignationRefereed
EditorCullis, AG, StatonBevan AE, Hutchison JL
Book TitleMicroscopy of Semiconducting Materials 1993
Series TitleInstitute of Physics Conference Series
Pagination513-516
ISBN Number0951-32480-7503-0290-9
Accession NumberISI:A1993BA56Y00108
KeywordsELASTIC RELAXATION, PATTERNS
Abstract

Large-angle convergent-beam electron diffraction (LACBED) is suitable to reveal information on local strain and misfit stress relaxation of GexSi1-x/Si strained-layer superlattices (SLS) because the diffraction lines are sensitively dependent on small changes of the spacing between lattice planes. We shall demonstrate that the line shifts in a cross-sectional specimen caused by the effects of misfit strain and stress relaxation can be separated. An electron hologramtaken from a GexSi1-x/Si SLS is also presented as a preliminary result.