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The detection of strain within InP-InGaAs single quantum well structures using large-angle convergent-beam electron diffraction

TitleThe detection of strain within InP-InGaAs single quantum well structures using large-angle convergent-beam electron diffraction
Publication TypeJournal Article
Year of Publication1991
AuthorsJordan, IK, Grigorieff N, Cherns D, Hockly M, Spurdens PC, Aylett MR, Scott EG
JournalInstitute of Physics Conference Series
Pagination563-568
ISBN Number0951-3248
Accession NumberISI:A1991HJ30700110
Abstract

The large angle convergent beam electron diffraction technique has been used to obtain rocking curves from MOVPE and MBE grown InP-In.53Ga.47As single quantum well samples. Reflections sensitive to strain within the well layer were studied. From analysis of the curves an estimate of the mean strain present within the well in the samples has been made. Strains as low as 1.2.10(-3) have been measured. Plan-view specimens were used, reducing the problem of surface relaxation effects often encountered in thin cross-sectioned foils.